Diodes for Improved Efficiency and Higher Performance
Clifton's main products are gallium arsenide p-i-n rectifier diodes and diode chips. Due to Liquid Phase Epitaxy (LPE) process they provide better temperature performance and durability. Clifton's power diodes function well above the maximum junction temperature of more traditional diodes while maintaining comparable recovery time and forward voltage.
Features
- High maximum junction temperature; up to +260 ºC vs. +175 ºC for silicon diodes
- Low and temperature independent dynamic recovery characteristics over the full specified temperature range
- Low leakage current at all operating temperatures
- Very low capacitance
- Higher radiation hardness
- Higher current ratings (to 150 amps)
These advantages allow consumers to gain considerable savings in the power system design due to lighter and smaller cooling devices, along with increased efficiency, durability and reliability of power application at high operating frequencies.